PCSI Conference

1 January 2009

Conference on the Physics and Chemistry of Semiconductor Interfaces

Venue

United States, Santa Fe, 100 East San Francisco Street

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About PCSI Conference

The annual PCSI conference is devoted to achieving a fundamental understanding of the physical, chemical, structural, and electrical properties of semiconductor surfaces and interfaces. These studies include characterization of growth processes and the structure and influence of defects. Generous amounts of discussion time will be included in the program in order to emphasize the workshop character and to stimulate the exchange of new ideas.

Thematic sections

Novel theoretical investigations of semiconductor interfaces
Surface/interface issues related to nitride electronics and photonics
Surface/interface issues related to spintronics
Properties/limitations of high-k gate dielectrics on Si, SiGe, SiC, and compound semiconductors
Passivation of compound semiconductor surfaces
Bonding/electronic structures of compound semiconductor interfaces
Surface/interface issues related to nanostructures
Organic/inorganic interfaces
Metal contacts to new semiconductor materials
Interfaces in dissimilar materials
Interfaces in semiconducting oxides and multifunctional materials
High resolution probes of semiconducting interfaces
Effects of interfaces on carrier transport and optical properties